s mhop microelectronics c orp. a symbol v ds v gs i dm w a p d c 1.25 -55 to 150 i d units parameter 100 1 3.16 v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics n-channel enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed a maximum power dissipation operating junction and storage temperature range t j , t stg www.samhop.com.tw jun,22,2011 1 details are subject to change without notice. t a =25 c a 100 c/w thermal resistance, junction-to-ambient r ja d g d s sot-89 t a =70 c a 0.8 t a =70 c w 0.8 e as mj single pulse avalanche energy c 1.1 STK900 g r e r r p p r p p o r r product summary v dss i d r ds(on) ( ) @ vgs=4.5v 1.9 @ vgs=10v s g d suface mount package. features super high dense cell design for low r ds(on) . rugged and reliable. esd protected. ver 1.0 d
symbol min typ max units bv dss 100 v 1 i gss 10 ua v gs(th) v 1.50 g fs s c iss 64 pf c oss 17.4 pf c rss 8.5 pf q g 7.5 nc 8.5 65 12 t d(on) 1.9 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =45v i d =0.5a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time ohm v gs =10v , i d =0.5a v ds =10v , i d =0.5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =80v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =10ma reverse transfer capacitance on characteristics v gs =4.5v , i d =0.5a 1.90 1.75 2.20 ohm b f=1.0mhz b www.samhop.com.tw jun,22,2011 2 nc q gs nc q gd 0.43 0.62 gate-drain charge gate-source charge v ds =45v,i d =0.5a, v gs =10v drain-source diode characteristics and maximum ratings nc 1.23 v ds =45v,i d =0.5a,v gs =10v v ds =45v,i d =0.5a,v gs =4.5v v sd diode forward voltage v gs =0v,i s =0.1a 0.8 1.3 v notes a.pulse test:pulse width < 300us, duty cycle < 2%. b.guaranteed by design, not subject to production testing. c.starting t j =25 c,l=0.5mh,v dd = 40v.(see figure13) d.pulse test:pulse width < 1us, duty cycle < 1%. _ _ 1 1.7 3 0.88 STK900 ver 1.0 d _ _
STK900 www.samhop.com.tw jun,22,2011 3 figure 1. output characteristics v ds , drain-to-source voltage (v) i d , drain current(a) figure 2. transfer characteristics v gs , gate-to-source voltage (v) 1.0 0.8 0.6 0.2 0 0 0.8 1.6 2.4 3.2 4.0 4.8 tj=125 c -55 c 0.4 25 c i d , drain current(a) i d , drain current (a) 3.0 2.5 2.0 1.5 1.0 0.5 0 0.3 0.6 0.9 1.2 1.5 0.1 0 25 50 75 tj( c) 150 100 125 tj, junction temperature ( c) vth, normalized gate-source threshold voltage tj, junction temperature ( c) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 figure 5. gate threshold variation with temperature figure 6. breakdown voltage variation with temperature bv dss , normalized drain-source breakdown voltage tj, junction temperature ( c) -50 -25 0 25 50 75 100 125 150 1.3 1.2 1.1 1.0 0.9 0.8 0.7 r ds(on) , on-resistance normalized drain current and temperature figure 4. on-resistance variation with and gate voltage figure 3. on-resistance vs. drain current ver 1.0 1.00 0.75 0.50 0.25 0 0 1.0 2.0 3.0 4.0 5.0 1.25 v gs =10v v gs =10v r ds(on) ( ) v gs = 4.5v v gs =10v i d =0.5a v gs =4.5v i d =0.5a 1.50 0.8 1.6 1.2 2.0 1.8 1.4 1.0 v ds =v gs i d =250ua i d = 250ua v gs =3v v gs =3.5v v gs =4v
STK900 www.samhop.com.tw jun,22,2011 4 gate-source voltage figure 7. on-resistance vs. v gs , gate-sorce voltage(v) is, source-drain current (a) figure 8. body diode forward voltage variation with source current v sd , body diode forward voltage(v) figure 9. capacitance c, capacitance (pf) v ds , drain-to source voltage(v) v gs , gate to source voltage (v) figure 10. gate charge qg, total gate charge(nc) ver 1.0 r ds(on) ( ) figure 12. maximum safe i d , drain current (a) v ds , drain-source voltage (v) operating area 0.1 1 10 100 1 0.1 0.01 dc 10s r ds (o n) l i m it 10 m s 100ms 6 5 4 3 2 1 0 0 125 c 75 c 25 c 1.0 0 0.4 0.8 1.2 1.6 2.0 5.0 125 c 25 c 75 c crss coss 60 50 40 30 20 10 0 10 15 20 25 30 0 5 switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 110 100 1 10 100 300 v ds =45v,i d =0.5a v gs =10v td(on) tr td(off ) tf 1s i d =0.5a 10 8 6 4 2 v ds =45v i d = 0.5a 0 0.9 0.6 0.3 0 10 8 6 4 2 2.4 2.1 1.8 1.5 1.2 v gs =10v single pulse t a =25c 80 70 ciss
STK900 www.samhop.com.tw jun,22,2011 5 unclamped inductive test circuit figure 13a. unclamped inductive waveforms figure 13b. tp v(br) ds s i as ver 1.0 10 -3 10 -4 p dm t 1 t 2 1. r e ja (t)=r (t) * r e ja 2. r e ja =see datasheet 3. t jm- t a =p*r e ja (t) 4. duty cycle, d=t1/t2 10 0 single pulse 10 -1 10 1 10 2 10 0 10 -1 10 -2 10 -3 0.02 0.05 0.1 0.2 d=0.5 10 -2 0.01 r(t),normalized effective transient thermal impedance square wave pulse duration (msec) figure 14. normalized thermal transient impedance curve r g i as 0.01 t p d.u.t l v ds + - dd 20v v
STK900 www.samhop.com.tw jun,22,2011 6 package outline dimensions sot-89 ref. min. 4.40 4.05 1.50 1.30 2.40 0.89 max. 4.60 4.25 1.70 1.50 2.60 1.20 5 dime ns ions a a1 b b1 c c1 a b b1 h c a1 c1 e d f2 f1 g 1.50 0.40 1.40 0.35 0.70 ref. 0.52 1.60 0.41 typ. ref. e f f1 f2 g d milimeters h 3.00 ref. f ver 1.0
STK900 www.samhop.com.tw jun,22,2011 7 sot-89 tape sot-89 carrier tape unit: @ section a-a package sop 8n 150 ? a1 b1 b2 cd eb3 gh j k 4.85 4.45 1.85 0.254 1.75 ! 2 0.10 5.5 2 0.05 1.50 2 0.10 1.5 2 0.25 12.0 2 0.10 2 0.10 2 0.10 2 0.02 a a b b h c e d j f g k 4.0 2 0.10 8.0 2 0.10 2.0 2 0.05 f +0.30 . 0.10 10c 40.0 2 0.20 8 max. a1 section b-b b2 b1 b3 12 max. ver 1.0
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